S1T2418G01 Datasheet, PDF (1/4 Pages) Samsung semiconductor – TONE RINGER WITH DRIDGE DIODE

TONE RINGER WITH DRIDGE DIODE
INTRODUCTION
The S1T2418G01/D02 is a monolithic integrated circuit telephone
tone ringer with bridge diode. When coupled with an appropriate
transducer, it replaces the electro-mechanical bell.
This device is designed for use with either a piezo transducer or an
inexpensive transformer-coupled speaker to produce a pleasing tone
composed of high frequencies (f_H1, f_H2) alternating with a low
frequency (f_S) resulting in a warble frequency.
The supply voltage is obtained from the AC ring signal and the circuit
is designed so that noise on the line or variation of the ringing signal
cannot affect correct operation of the device.
8−DIP−300
FEATURES
• Built-in full wave bridge diode rectifier
• Low current consumption, in order to allow the parallel operation of 4 devices
• Few external components
• Tone and adjustable switching frequencies by external components
• High noise immunity to current hysteresis due to built-in voltage
• Adjustable activation voltage
• Internal zener diodes to protect against over-voltages
• Adjustable ringer impedance with external components
APPLICATIONS
• Electronic telephone ringers
• Extension ringers
ORDERING INFORMATION
Device
S1T2418G01-D0B0
S1T2418D02-D0B0
Package
8−DIP−300
Operating Temperature
−20°C to +70°C
S1T2418G01/D02
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