KMM366S403CTL Datasheet, PDF (1/11 Pages) Samsung semiconductor – PC66 SDRAM MODULE

KMM366S403CTL
PC66 SDRAM MODULE
Revision History
Revision .3 (Mar. 1998)
•Some Parameter values & Characteristics of comp. level are changed as below :
- Input leakage currents (Inputs) :±5uA to ±1uA.
- Input leakage currents (I/O) :±5uA to ±1.5uA.
- Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.
- AC Operating Condition is changed as defined :
VIH(max) = 5.6V AC. The overshoot voltage duration is≤ 3ns.
VIL(min) = -2.0V AC. The undershoot voltage duration is≤ 3ns.
REV. 3 Mar. '98