KMM366S1623DTL Datasheet, PDF (1/10 Pages) Samsung semiconductor – PC66 Unbuffered DIMM

KMM366S1623DTL
PC66 Unbuffered DIMM
Revision History
Revision 0.0(July 7, 1999)
• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.
• Skip ICC4 value of CL=2 in DC characteristics in datasheet.
• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.
• Symbol Change Notice
Before
I_IL
Input leakage current (inputs)
I_IL
Input leakage current (I/O pins)
I_LI
I_OL
Output open @ DC characteristic table
Io
After
Input leakage current
Output open @ DC characteristic table
• Test Condition in DC CHARACTERISTIC Change Notice
Symbol
Before
After
I_{CC2P ,} I_CC3P
CKE ≤ VIL(max), tCC = 15ns
CKE ≤ VIL(max), tCC = 10ns
I_{CC2N ,} I_CC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
I_CC4
2 Banks activated
4 Banks activated
• Added Notes @OPERATING AC PARAMETER
Notes : 5. For -0, tRDL=1CLK and tDAL=1CLK+20ns is also supported .
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.
REV. 0.0 July 1999