KM681002B Datasheet, PDF (1/8 Pages) Samsung semiconductor – 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.

KM681002B, KM681002BI
PRELIMINARY
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CMOS SRAM
Document Title
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
Rev No.
History
Rev. 0.0
Initial release with Design Target.
Rev.1.0
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Rev.2.0
Release to Final Data Sheet.
2.1. Delete Preliminary
2.2. Delete 32-SOJ-300 package
2.3. Delete L-version.
2.4. Delete Data Retention Characteristics and Waveform.
2.5. Add Capacitive load of the test environment in A.C test load
2.6. Change D.C characteristics
Items
Previous spec.
(8/10/12ns part)
Changed spec.
(8/10/12ns part)
Icc
160/150/140mA
160/155/150mA
Isb
30mA
50mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Remark
Design Target
Preliminary
Feb. 25th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquart ers.
-1-
Rev 2.0
February 1998