KM681001B Datasheet, PDF (1/9 Pages) Samsung semiconductor – 128K x 8 Bit High-Speed CMOS Static RAM

PRELIMINARY
KM681001B
CMOS SRAM
Document Title
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
Rev . No.
History
Rev. 0.0
Initial release with Design Target.
Rev. 1.0
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Rev. 2.0
Release to Final Data Sheet.
1. Delete Preliminary.
2. Delete 17ns, L-version and Industrial Temperature Part.
3. Delete Voh1=3.95V.
4. Delete Data Retention Characteristics and Wave form.
5. Relex operating current
Speed
Previous
Now
15ns
130mA
125mA
17ns
120mA
-
20ns
110mA
123mA
Draft Data
Remark
Feb. 1st, 1997 Design Target
Jun. 1st, 1997 Preliminary
Feb. 6th. 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.0
February 1998