KM62U256D Datasheet, PDF (1/9 Pages) Samsung semiconductor – 32Kx8 bit Low Power and Low Voltage CMOS Static RAM

KM62V256D, KM62U256D Family
Document Title
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
History
Initial draft
1.0
Finalize
- Add 70ns part in KM62U256D Family
- Show ICC read only, and increased value
ICC = 2mA →ICC Read = 5mA
- Seperate ICC1 read and write
ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA
- Improved standby current(ISB1)
Commercial part : 10µA→5µA
Extended and Industrial part : 20µA→5µA
- Improved VIL(Min.) : 0.4V→0.6V
- Improved power dissipation : 0.7W→1W
Draft Data
April 1, 1997
November 12, 1997
Remark
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
November 1997