K9T1G08U0M Datasheet, PDF (1/38 Pages) Samsung semiconductor – 128M x 8 Bits NAND Flash Memory

K9T1G08U0M
Document Title
128M x 8 Bits NAND Flash Memory
Revision History
Revision No. History
0.0
Initial issue.
0.1
tR is changed. [Old : 12µs(Max.), New :15µs(Max.)]
0.2
CE must be held low during tR added.
0.3
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
0.4
1. PKG(TSOP1, WSOP1) Dimension Change
0.5
1. Technical note is changed
2.Note1 of Program/Erase characteristics is added
Preliminary
FLASH MEMORY
Draft Date
Aug. 7th 2003
Oct. 20th 2003
Mar. 9th 2004
Apr. 24th 2004
May. 24th 2004
Oct. 25th 2004
Remark
Advanced
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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