K9F6408Q0C Datasheet, PDF (1/29 Pages) Samsung semiconductor – 8M x 8 Bit Bit NAND Flash Memory

K9F6408Q0C
K9F6408U0C
Document Title
8M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0
Initial issue.
0.1
1. IOL(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
2. Package part number is modified.
K9F6408U0C-Y ---> K9F6408U0C_T
3. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
0.2
1. TBGA package is changed.
- 9mmX11mm 63ball TBGA ---> 6mmX8.5mm 48ball TBGA
2. Part number(TBGA package part number) is changed
- K9F6408Q0C-D ----> K9F6408Q0C-B
- K9F6408U0C-D -----> K9F6408U0C-B
3. K9F6408U0C-BCB0,BIB0 products are added
Draft Date
Jul. 24 . 2001
Nov. 5 . 2001
Nov. 12 . 2001
0.3
1. WSOP1 package is added.
- Part number : K9F6408U0C_VCB0,VIBO
Mar. 13 . 2002
0.4
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 28)
Nov. 21. 2002
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 29)
0.5
The min. Vcc value 1.8V devices is changed.
K9F64XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 05. 2003
0.6
Pb-free Package is added.
K9F6408U0C-QCB0,QIB0
K9F6408U0C-HCB0,HIB0
K9F6408Q0C-HCB0,HIB0
K9F6408U0C-FCB0,FIB0
Mar. 13 . 2003
0.7
Note is added.
Jul. 04. 2003
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
0.8
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
Apr. 24. 2004
0.9
1. PKG(WSOP1) Dimension Change
May. 24. 2004
Remark
Advance
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the
SAMSUNG branch office near you.
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