K9F2808U0M- Datasheet, PDF (1/26 Pages) Samsung semiconductor – 16M x 8 Bit NAND Flash Memory

K9F2808U0M-YCB0, K9F2808U0M-YIB0
Document Title
16M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
Initial issue.
1.0
1. Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.)
2. Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.)
3. Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V
1.1
1. Changed tR Parameter : 7µs(Max.) → 10µs(Max.)
2. Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.)
Spare Array 3 cycles(Max.)
3. Added CE don’t care mode during the data-loading and reading
1.2
1. Revised real-time map-out algorithm(refer to technical notes)
1.3
1. Changed device name
- KM29U128T -> K9F2808U0M-YCB0
- KM29U128IT -> K9F2808U0M-YIB0
1.4
1. Changed SE pin description
- SE is recommended to coupled to GND or Vcc and should not be
toggled during reading or programming.
FLASH MEMORY
Draft Date
April 10th 1998
July 14th 1998
Remark
Preliminary
Final
April 10th 1999
Final
June 30th 1999
Sep. 15th 1999
Final
Final
July 17th 2000
Final
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1