K7P803666B Datasheet, PDF (1/13 Pages) Samsung semiconductor – 256Kx36 AND 512Kx18 Synchronous Pipelined SRAM

K7P803666B
K7P801866B
256Kx36 & 512Kx18 SRAM
Document Title
256Kx36 & 512Kx18 Synchronous Pipelined SRAM
Revision History
Rev. No.
Rev. 0.0
History
- Initial Document.
Rev. 0.1
- ZQ tolerance changed from 10% to 15%
Rev. 0.2
- VDDQ changed to support wide range from 1.4V to 2.0V
Rev. 0.3
- Functional Block diagram changed.
- Absolute Maximum ratings VDDQ changed from 3.13V to 2.825V
- Recommended DC Operating Conditions for VREF and VCM-CLK changed
from Min 0.6V to 0.68V, from Max 0.9V to 1.0V
Rev. 1.0
- Package thermal characteristics added.
Rev. 2.0
- Absolute Maximum Rating VDDQ changed from 2.825V to 2.4V
Rev. 3.0
- Function Description modified
Draft Date
June. 2000
Aug. 2000
Dec. 2000
Feb. 2001
May. 2001
Jan. 2002
Mar. 2002
Remark
Advance
Advance
Advance
Preliminary
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
-1-
March. 2002
Rev 3.0