K7N803645M Datasheet, PDF (1/18 Pages) Samsung semiconductor – 256K X 36 & 512K X 18 PIPELINED N-T RAM - TM

K7N803645M
K7N801845M
256Kx36 & 512Kx18 Pipelined NtRAM^TM
Document Title
256Kx36 & 512Kx18-Bit Pipelined NtRAM^TM
Revision History
Rev. No.
0.0
0.1
History
1. Initial document.
1. Changed speed bin from 167MHz to 150MHz
2. Changed DC Parameters;
ICC : from 400mA to 450mA , ISB : from 60mA to 20mA
ISB2 : from 50mA to 85mA
Draft Date
September. 1997
November. 1997
Remark
Preliminary
Preliminary
0.2
1. Changed speed bin from 150MHz to 167MHz
2. Changed Power from 3.3V to 2.5V
3. Changed N.C pins to Power and ZZ Pin #14, #16, #64, #66
4. Changed some control pin names.
from CEN to CKE, from BWEx to BWx
5. Modify absolute maximum ratings
VDD ; from 4.0V to 3.6V, VIN ; from 4.6V to 3.6V
6. Changed DC parameters
ISB ; from 20mA to 80mA, ISB2 ; from 85mA to 10mA
VOL ; from 0.4V to 0.2V, VOH ; from 2.4V to 2.0V
VIL ; from 0.8V to 0.7V, VIH ; from 2.0V to 1.7V
7. ADD the sleep mode timing and characteristics
CKE controlled timing and CS controlled timing
March. 11. 1998
Preliminary
0.3
1. Removed speed bin 167MHz
April. 11. 1998
Preliminary
2.Changed AC parameters
tHZOE ; from 4.0 to 3.5 , tHZC;from 4.0 to 3.5 at -75
tHZOE ; from 5.0 to 3.5 , tHZC;from 5.0 to 3.5 , tCL/H; 4.0 to 3.0 at -10
3.Modify Sleep Mode Waveform.
Changed Sleep Mode Electrical Characteristics .
tPDS ;from Max 2cycle to Min 2cycle
tPUS ; from Max 2cycle to Min 2cycle
0.4
1.Modify from ADV to ADV at timing.
2.ADD the Trade Mark( NtRAM^TM)
June. 02. 1998
Preliminary
0.5
1. Changed DC parameters
ISB1; from 10mA to 20mA, ISB2 ; from 10mA to 20mA
Aug. 19. 1998
Preliminary
0.6
1. Changed tCD,tOE from 4.0ns to 4.2ns at -75.
Sep. 28. 1998
Preliminary
0.7
1. Changed DC condition at Icc and parameters
Nov. 10. 1998
Preliminary
ICC ; from 420mA to 320mA at -67 , from 370mA to 300mA at -75
from 300mA to 250mA at -10.
ISB ; from 70mA to 60mA at -67 , from 60mA to 50mA at -75
from 50mA to 40mA at -10.
0.8
1.Changed VOL Max value from 0.2V to 0.4V .
0.9
1. Add 119BGA(7x17 Ball Grid Array Package) .
1.0
1. Final spec release
Dec. 23. 1998
Mar. 03. 1999
April. 01. 1999
Preliminary
Preliminary
Final
2.0
1. Add tCYC 167Mhz.
Oct. 30. 1999
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
November 1999
Rev 3.0