K7N403609B Datasheet, PDF (1/18 Pages) Samsung semiconductor – 128Kx36 & 256Kx18 Pipelined NtRAMTM

K7N403609B
K7N401809B
128Kx36 & 256Kx18 Pipelined NtRAM^TM
Document Title
128Kx36 & 256Kx18-Bit Pipelined NtRAM^TM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Changed DC parameters
Icc ; from 470mA to 400mA at -25,
from 440mA to 360mA at -22,
from 400mA to 330mA at -20,
from 370mA to 310mA at -18,
ISB ; from 180mA to 160mA at -25,
from 170mA to 155mA at -22,
from 160mA to 150mA at -20,
from 150mA to 140mA at -18,
ISB1 ; from 100mA to 80mA
0.2
1. Add x32 org. and industrial temperature
1.0
1. Final spec release
2. Changed Pin Capacitance
- Cin ; from 5pF to 4pF
- Cout ; from 7pF to 6pF
2.0
1. Remove x32 organization.
2. Remove -25/-22 speed bin
Draft Date
May. 15. 2001
June. 12. 2001
Remark
Preliminary
Preliminary
Aug. 11. 2001
Nov. 15. 2001
Preliminary
Final
Nov. 17. 2003
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Nov. 2003
Rev 2.0