K7N403601M Datasheet, PDF (1/17 Pages) Samsung semiconductor – 128Kx36 & 256Kx18 Pipelined NtRAM-TM

K7N403601M
K7N401801M
128Kx36 & 256Kx18 Pipelined NtRAM^TM
Document Title
128Kx36 & 256Kx18-Bit Pipelined NtRAM^TM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Changed tCD,tOE from 4.0ns to 4.2ns at -75
2. Changed DC condition at Icc and parameters
ISB1 ; from 10mA to 30mA,
ISB2 ; from 10mA to 30mA.
0.2
Add VDDQ Supply voltage( 2.5V I/O )
0.3
Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.
1.0
Final spec Release.
2.0
Remove VDDQ Supply voltage( 2.5V I/O )
3.0
Add VDDQ Supply voltage( 2.5V I/O )
Draft Date
July.06. 1998
Oct. 10 . 1998
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Feb. 25. 1999
May. 13. 1999
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
May 1999
Rev 3.0