K7N403601A Datasheet, PDF (1/17 Pages) Samsung semiconductor – 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM

K7N403601A
K7N401801A
128Kx36 & 256Kx18 Pipelined NtRAM^TM
Document Title
128Kx36 & 256Kx18-Bit Pipelined NtRAM^TM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Changed DC condition at Icc and ISB.
Icc ; from 350mA to 400mA at -16,
from 340mA to 390mA at -15,
from 310mA to 360mA at -13,
ISB ; from 130mA to 140mA at -16,
from 120mA to 130mA at -15,
from 120mA to 130mA at -13,
1.0
1. Final spec release
2. Changed input & output capacitance.
CIN ; from 6pF to 5pF,
COUT ; from 8pF to 7pF,
Draft Date
Jan. 20. 2000
April. 03. 2000
Remark
Preliminary
Preliminary
May. 15. 2000
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
May 2000
Rev 1.0