K7N163645M Datasheet, PDF (1/20 Pages) Samsung semiconductor – 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM

K7N163645M
K7N161845M
512Kx36 & 1Mx18 Pipelined NtRAM^TM
Document Title
512Kx36 & 1Mx18-Bit Pipelined NtRAM^TM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Update ICC & ISB values.
0.2
1. Change pin allocation at 119BGA .
- A4 ; from NC to A .
- B2 ; from A to CS2
- B4 ; from CKE to ADV
- B6 ; from A to CS2
- G4 ; from ADV to A
- H4 ; from NC to WE
- M4 ; from WE toCKE
2. Changed DC condition at Icc and parameters
Icc ; from 320mA to 300mA at -67,
from 300mA to 280mA at -75,
0.3
Add tCYC 167MHz.
1.0
Final spec release
Draft Date
Dec. 22. 1998
May. 27. 1999
Nov. 19. 1999
Remark
Preliminary
Preliminary
Preliminary
Nov. 26. 1999
Jan. 28. 2000
Preliminary
Fianl
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
January 2000
Rev 1.0