K7N163601M Datasheet, PDF (1/20 Pages) Samsung semiconductor – 512Kx36 & 1Mx18-Bit Pipelined NtRAM TM

K7N163601M
K7N161801M
512Kx36 & 1Mx18 Pipelined NtRAM^TM
Document Title
512Kx36 & 1Mx18-Bit Pipelined NtRAM^TM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Update ICC & ISB values.
0.2
1. Change ISB value from 80mA to 110mA at -67.
2. Change ISB value from 70mA to 90mA at -72 .
3. Change ISB value from 60mA to 80mA at -10 .
0.3
1. Change pin allocation at 119BGA .
- A4 ; from NC to A .
- B2 ; from A to CS2
- B4 ; from CKE to ADV
- B6 ; from A to CS2
- G4 ; from ADV to A
- H4 ; from NC to WE
- M4 ; from WE toCKE
2. Changed DC condition at Icc and parameters
Icc ; from 420mA to 400mA at -67,
from 370mA to 380mA at -75,
from 300mA to 320mA at -10,
0.4
1. Add tCYC 167MHz.
1.0
1. Final Spec Release.
Draft Date
Remark
Dec. 22. 1998 Preliminary
May. 27. 1999 Preliminary
Sep. 04. 1999 Preliminary
Nov. 19. 1999 Preliminary
Nov. 26. 1999
Dec. 08. 1999
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
December 1999
Rev 1.0