K7M163625M Datasheet, PDF (1/20 Pages) Samsung semiconductor – 512Kx36 & 1Mx18 Flow-Through NtRAM-TM

K7M163625M
K7M161825M
512Kx36 & 1Mx18 Flow-Through NtRAM^TM
Document Title
512Kx36 & 1Mx18-Bit Flow Through NtRAM^TM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Update ICC & ISB values.
0.2
1. Change tOE from 3.5ns to 4.0ns at -8 .
2. Change tOE from 3.5ns to 4.0ns at -9 .
3. Change tOE from 3.5ns to 4.0ns at -10 .
0.3
1. Change ISB value from 60mA to 80mA at -8.
2. Change ISB value from 50mA to 70mA at -9 .
3. Change ISB value from 40mA to 60mA at -10 .
0.4
1. Changed tCYC from 12ns to 10ns at -9 .
2. Changed DC condition at Icc and parameters
Icc ; from 300mA to 320mA at -8,
from 260mA to 300mA at -9,
from 240mA to 280mA at -10
3. Change pin allocation at 119BGA .
- A4 ; from NC to A .
- B2 ; from A to CS2
- B4 ; from CKE to ADV
- B6 ; from A to CS2
- G4 ; from ADV to A
- H4 ; from NC to WE
- M4 ; from WE toCKE
1.0
1. Final Spec Release.
2.0
Add access time 7.5ns bin.
3.0
1. Remove -10 bin ( tCD=10ns)
Draft Date
March. 25. 1999
May. 27. 1999
June. 22. 1999
Remark
Preliminary
Preliminary
Preliminary
Sep. 04. 1999
Preliminary
Nov. 19. 1999
Preliminary
Dec. 08. 1999
Nov. 23. 2000
Feb. 23. 2001
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
February 2001
Rev 3.0