K7A803601M Datasheet, PDF (1/17 Pages) Samsung semiconductor – 256Kx36 & 512Kx18 Synchronous SRAM

K7A803601M
K7A801801M
256Kx36 & 512Kx18 Synchronous SRAM
Document Title
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. History
0.0
Initial draft
0.1
Modify DC characteristics( Input Leakage Current test Conditions)
form VDD=VSS to VDD to Max.
0.2
Remove 119BGA Package Type.
0.3
Change DC Characteristics.
ISB value from 65mA to 110mA at -72
ISB value from 60mA to 110mA at -85
ISB value from 50mA to 100mA at -10
ISB1 value from 10mA to 30mA
ISB2 value from 10mA to 30mA
0.4
1. Changed tCD from 4.0ns to 4.2ns at -85.
Changed tOE from 4.0ns to 4.2ns at -85.
2. Changed DC condition at Icc and parameters
Icc ; from 375mA to 400mA at -72,
from 340mA to 380mA at -85,
from 300mA to 350mA at -10,
ISB ; from 110mA to 130mA at -72,
from 110mA to 130mA at -85,
from 100mA to 120mA at -10
0.5
ADD VDDQ Supply voltage( 2.5V )
0.6
Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.
1.0
Final spec Release.
2.0
1. Remove VDDQ Supply voltage( 2.5V I/O )
3.0
1. Add VDDQ Supply voltage( 2.5V I/O )
Draft Date
Remark
May. 07 . 1998 Preliminary
June .08. 1998 Preliminary
Aug. 20. 1998 Preliminary
Aug. 27. 1998 Preliminary
Sep. 09. 1998 Preliminary
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Feb. 25. 1999
May. 13. 1999
Preliminary
Preliminary
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
May 1999
Rev 3.0