K6X8016T3B Datasheet, PDF (1/9 Pages) Samsung semiconductor – 512Kx16 bit Low Power Full CMOS Static RAM

K6X8016T3B Family
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
Revision History
Revision No. History
0.0
Initial draft
0.1
Revised
- Deleted 44-TSOP2-400R package type.
1.0
Finalized
- Changed ICC1 from 4mA to 3mA
- Changed ICC2 from 45mA to 30mA
- Changed ISB1(industrial) from 30µA to 15µA
- Changed ISB1(Automotive) from 40µA to 25µA
CMOS SRAM
Draft Date
October 31, 2002
Remark
Preliminary
December 11, 2002 Preliminary
September 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
September 2003