K6X8008C2B Datasheet, PDF (1/9 Pages) Samsung semiconductor – 1Mx8 bit Low Power and Low Voltage CMOS Static RAM

K6X8008C2B Family
Document Title
1Mx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
Initial draft
0.1
Revised
- Deleted 44-TSOP2-400R package type.
- Added Commercial product.
1.0
Finalized
- Changed ICC from 10mA to 6mA
- Changed ICC1 from 10mA to 7mA
- Changed ICC2 from 50mA to 35mA
- Changed ISB from 3mA to 0.4mA
- Changed ISB1(Commercial) from 40µA to 25µA
- Changed ISB1(industrial) from 40µA to 25µA
- Changed ISB1(Automotive) from 50µA to 40µA
- Changed IDR(Commercial) from 30µA to 15µA
- Changed IDR(industrial) from 30µA to 15µA
- Changed IDR(Automotive) from 40µA to 30µA
Draft Date
October 31, 2002
Remark
Preliminary
December 11, 2002 Preliminary
September 16, 2003 Final
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products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
September 2003