K6X4008C1F Datasheet, PDF (1/9 Pages) Samsung semiconductor – 512Kx8 bit Low Power full CMOS Static RAM

K6X4008C1F Family
Document Title
512Kx8 bit Low Power full CMOS Static RAM
Revision History
Revision No. History
0.0
Initial draft
0.1
Revised
- Added Commercial Product.
1.0
Finalized
- Added Lead Free 32-SOP-525 Product
- Changed ICC from 10mA to 5mA
- Changed ICC1 from 8mA to 7mA
- Changed ICC2 from 40mA to 30mA
- Changed ISB from 3mA to 0.4mA
- Changed IDR(Commercial) from 15µA to 12µA
- Changed IDR(industrial) from 20µA to 12µA
- Changed IDR(Automotive) from 30µA to 25µA
CMOS SRAM
Draft Date
July 30, 2002
Remark
Preliminary
November 30, 2002 Preliminary
September 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
September 2003