K6X1008C2D Datasheet, PDF (1/10 Pages) Samsung semiconductor – 128Kx8 bit Low Power CMOS Static RAM

K6X1008C2D Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0
Initial draft
0.1
Revised
- Deleted 32-TSOP1-0820R Package Type.
- Added Commercial product.
0.2
Revised
- Added Lead Free 32-SOP-525 Product
0.3
Revised
- Added Lead Free 32-TSOP1-0820F Product
1.0
Finalized
- Changed ICC from 10mA to 5mA
- Changed ICC2 from 35mA to 25mA
- Changed ISB from 3mA to 0.4mA
- Changed IDR(industrial) from 15µA to 10µA
- Changed IDR(Automotive) from 25µA to 20µA
CMOS SRAM
Draft Data
July 15, 2002
December 4, 2002
Remark
Preliminary
Preliminary
May 13, 2003
Preliminary
June 21, 2003
Preliminary
September 16, 2003 Final
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products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
September 2003