K6T8016C3M Datasheet, PDF (1/9 Pages) Samsung semiconductor – 512Kx16 bit Low Power CMOS Static RAM

K6T8016C3M Family
Document Title
512Kx16 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
Initial draft
Draft Date
June 18, 1999
Remark
Advance
1.0
Finalize
February 29, 2000 Final
- Adopt New Code system.
- Improve VIN, VOUT max. on A’ BSOLUTE MAXIMUM RATINGS’from
7.0V to VCC+0.5V.
1.01
Errata correction
April 17, 2000
Final
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products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.01
April 2000