K6T4008V1C Datasheet, PDF (1/10 Pages) Samsung semiconductor – 512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
Initial Draft
0.1
Revisied
- Speed bin change
KM68U4000C : 85/100ns → 70/85/100ns
- DC Characteristics change
ICC : 5mA at read/write → 4mA at read
ICC1 : 3mA → 4mA
ICC2 : 35mA → 30mA
ISB : 0.5mA → 0.3mA
ISB1 : 10µA → 15µA for commercial parts
- Add 32-TSOP1-0820
0.11
Errata correct
- 32-TSOP1-0813 products: T → TG
1.0
Finalize
Draft Data
January 13, 1998
June 12, 1998
Remark
Advance
Preliminary
November 7, 1998
January 15, 1999
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
January 1999