K6T1008V2C-TB70 Datasheet, PDF (1/11 Pages) Samsung semiconductor – 128K x8 bit Low Power and Low Voltage CMOS Static RAM

K6T1008V2C, K6T1008U2C Family
Document Title
128K x8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
Initial draft
1.0
Finalize
- Increased ISB, IDR
Commercial part = 10µA
Industrial part = 20µA
2.0
Revise
- Change speed bin
KM68V1000C Family: 70/85ns → 70/100ns
KM68U1000C Family: 70/100ns → 85/100ns
- Improved operating current: 40mA → 35mA
- Improved power dissipation
PD: 0.7W → 1.0W
- Improved standby current
Extended/Industrial: 20 → 10µA
- VIL: 0.4V → 0.6V
Draft Data
July 3, 1996
Remark
Preliminary
December 16, 1996 Final
November 25, 1997 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
November 1997