K6R4016V1C-C Datasheet, PDF (1/11 Pages) Samsung semiconductor – 256Kx16 Bit High Speed Static RAM(3.3V Operating)

PRELIMPreliminaryPPPPPPPPPINARY
K6R4016V1C-C/C-L, K6R4016V1C-I/C-P
CMOS SRAM
Document Title
256Kx16 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed ISB1 to 20mA
Rev. 2.0
Relax D.C parameters.
Item
12ns
ICC
15ns
20ns
Previous
180mA
175mA
170mA
Current
200mA
195mA
190mA
Draft Data
Remark
Feb. 12. 1999 Preliminary
Mar. 29. 1999 Preliminary
Aug. 19. 1999 Preliminary
Rev. 3.0
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
Previous
ICC
Isb
Isb1
ICC
10ns
-
160mA
12ns
15ns
200mA
195mA
70mA
20mA
150mA
140mA
20ns 190mA
130mA
Current
Isb
60mA
Isb1
10mA
Mar. 27. 2000 Final
Rev. 4.0
Rev. 5.0
Add Low Power-Ver.
Delete 20ns speed bin
Apr. 24. 2000 Final
Sep. 24. 2001 _Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 5.0
September 2001