K6R4016C1D Datasheet, PDF (1/12 Pages) Samsung semiconductor – 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

PRELIMPreliminaryPPPPPPPPPINARY
K6R4016C1D
CMOS SRAM
Document Title
256Kx16 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No. History
Draft Data
Remark
Rev. 0.0 Initial release with Preliminary.
September. 7. 2001 Preliminary
Rev. 0.1 Package dimension modify on page 11.
Septermber.28. 2001 _Preliminary
Rev. 0.2
Change Icc, Isb and Isb1
Item
10ns
ICC(Commercial)
12ns
15ns
10ns
ICC(Industrial)
12ns
15ns
ISB
ISB1(Normal)
Previous
90mA
80mA
70mA
115mA
100mA
85mA
30mA
10mA
Current
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
November, 3, 2001
Preliminary
Rev. 0.3
Rev. 0.4
Rev. 1.0
Rev. 2.0
1. Correct AC parameters : Read & Write Cycle
2. Corrrect Power part : Delete "P-Industrial,Low Power" part
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
10ns
12ns
Previous
85mA
75mA
Current
75mA
65mA
1. Final datasheet release.
2. Delete 12ns speed bin.
1. Add the Lead Free Package type.
November, 23, 2001 _Preliminary
December, 18, 2001 _Preliminary
July, 09, 2002
June. 20, 2003
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
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Rev 2.0
June 2003