K6R4016C1C-C Datasheet, PDF (1/11 Pages) Samsung semiconductor – 256Kx16 Bit High Speed Static RAM(5V Operating).

PRELIMPreliminaryPPPPPPPPPINARY
K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I CMOS SRAM
Document Title
256Kx16 Bit High Speed Static RAM(5V Operating).
Operated at Extended and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics
1.3 Changed ISB1 to 20mA
Rev. 2.0
2.1 Relax D.C parameters.
Item
12ns
ICC
15ns
20ns
Previous
190mA
185mA
180mA
Current
200mA
195mA
190mA
2.2 Relax Absolute Maximum Rating.
Item
Voltage on Any Pin Relative to Vss
Previous
-0.5 to 7.0
Current
-0.5 to Vcc+0.5
Rev.3.0
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
10ns
12ns
15ns
20ns
ICC
-
200mA
195mA
190mA
Previous
Isb
70mA
Isb1
20mA
ICC
185mA
175mA
165mA
160mA
Current
Isb
60mA
Isb1
10mA
3.3 Added Extended temperature range
Rev.4.0 Delete 20ns speed bin
Draft Data
Remark
Feb. 12. 1999 Preliminary
Mar. 29. 1999 Preliminary
Aug. 19. 1999 Preliminary
Mar. 27. 2000 Final
Sep. 24. 2001 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 4.0
September 2001