K6R4008V1D Datasheet, PDF (1/10 Pages) Samsung semiconductor – 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

K6R4008V1D
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 0.1 Add Low Ver.
Rev. 0.2 Change Icc, Isb and Isb1
Item
8ns
ICC(Commercial)
10ns
12ns
15ns
8ns
ICC(Industrial)
10ns
12ns
15ns
ISB
ISB1(L-ver.)
Previous
110mA
90mA
80mA
70mA
130mA
115mA
100mA
85mA
30mA
0.5mA
Current
80mA
65mA
55mA
45mA
100mA
85mA
75mA
65mA
20mA
1.2mA
Rev. 0.3
Rev. 1.0
Rev. 2.0
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
1. Delete 12ns,15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
8ns
10ns
Previous
100mA
85mA
1. Add the Lead Free Package type.
Current
90mA
75mA
PRELIMINARY
CMOS SRAM
Draft Data
Remark
Aug. 20. 2001 Preliminary
Sep. 19. 2001 _Preliminary
Nov. 3. 2001
Preliminary
Nov.23. 2001 _Preliminary
Dec.18. 2001 _Final
July. 26, 2004 _Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 2.0
July 2004