K6R4008V1C-C Datasheet, PDF (1/9 Pages) Samsung semiconductor – 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY
K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
CMOS SRAM
3Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed ISB1 to 20mA
Rev. 2.0
Relax D.C parameters.
Item
12ns
ICC
15ns
20ns
Previous
160mA
155mA
150mA
Current
195mA
190mA
185mA
Draft Data
Feb. 12. 1999
Mar. 29. 1999
Remark
Preliminary
Preliminary
Aug. 19. 1999 ^Preliminary
Rev. 3.0
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
10ns
12ns
15ns
20ns
ICC
-
195mA
190mA
185mA
Previous
Isb
70mA
Isb1
20mA
ICC
155mA
145mA
135mA
125mA
Current
Isb
60mA
Isb1
10mA
Rev. 4.0 Add Low Power-Ver.
Rev. 5.0 Delete 20ns speed bin
Mar. 27. 2000 Final
Apr. 24. 2000
Sep. 24. 2001
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 5.0
September 2001