K6R4004C1C-C Datasheet, PDF (1/8 Pages) Samsung semiconductor – 1Mx4 Bit High Speed Static RAM(5V Operating).

PRELIMINARY
K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E CMOS SRAM
Document Title
1Mx4 Bit High Speed Static RAM(5V Operating).
Operated at Extended and Industrial Temperature Ranges.
Revision History
Rev No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
History
Initial release with Preliminary.
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics
1.3 Changed ISB1 to 20mA
2.1 Relax D.C parameters.
Item
12ns
ICC
15ns
20ns
Previous
160mA
155mA
150mA
Current
190mA
185mA
180mA
Draft Data
Feb. 12. 1999
Mar. 29. 1999
Remark
Preliminary
Preliminary
Aug. 19. 1999 Preliminary
Rev. 3.0
2.2 Relax Absolute Maximum Rating.
Item
Voltage on Any Pin Relative to Vss
Previous
-0.5 to 7.0
Current
-0.5 to Vcc+0.5
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
10ns
12ns
15ns
20ns
ICC
-
190mA
185mA
180mA
Previous
Isb
70mA
Isb1
20mA
ICC
160mA
150mA
140mA
130mA
Current
Isb
60mA
Isb1
10mA
Mar. 27. 2000 ^Final
3.3 Added Extended temperature range
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 3.0
March 2000