K6R1016V1D Datasheet, PDF (1/11 Pages) Samsung semiconductor – 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

K6R1016V1D
for AT&T
CMOS SRAM
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
History
Rev. 0.0
Rev. 0.1
Rev. 0.2
Initial document.
Speed bin modify
Current modify
Rev. 1.0
1. Delete 12ns speed bin.
2. Change Icc for Industrial mode.
Item
Previous
ICC(Industrial)
8ns
10ns
100mA
85mA
Rev. 2.0
1. Add tBA,tBLZ,tBHZ,tBW AC parematers.
Rev. 3.0
1. Correct read cycle timing diagram(2).
Current
90mA
75mA
Draft Data
May. 11. 2001
June. 18. 2001
September. 9. 2001
December. 18. 2001
Remark
Preliminary
Preliminary
Preliminary
Final
February. 14. 2002
June. 19. 2002
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 3.0
June 2002