K6R1016V1C Datasheet, PDF (1/11 Pages) Samsung semiconductor – 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
History
for AT&T
CMOS SRAM
Draft Data
Remark
Rev. 0.0
Rev. 1.0
Initial release with Preliminary.
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Changed DC characteristics.
Item
ICC
12ns
15ns
20ns
Previous
85mA
83mA
80mA
Changed
95mA
93mA
90mA
Aug. 5. 1998
Sep. 7. 1998
Preliminary
Final
Rev. 2.0
Rev. 2.1
Added 48-fine pitch BGA.
Changed device part name for FP-BGA.
Item
Previous
Symbol
Z
ex) K6R1016V1C-Z -> K6R1016V1C-F
Changed
F
Sep. 17. 1998
Nov. 5. 1998
Final
Final
Rev. 2.2
Changed device ball name for FP-BGA.
Previous
I/O1 ~ I/O8
I/O9 ~ I/O16
Changed
I/O9 ~ I/O16
I/O1 ~ I/O8
Dec. 10. 1998
Final
Rev. 3.0
1. Added 10ns speed for FP-BGA only.
2. Changed Standby Current.
Item
Previous
Standby Current(Isb1)
0.3mA
3. Added Data Retention Characteristics.
Changed
0.5mA
Mar. 2. 1999
Final
Rev. 3.1
Rev. 3.2
Added 10ns speed for all packages(44SOJ / 44TSOP2 / 48FPBGA)
Supply Voltage Change
1. Only 10ns Bin : 3.15V ~ 3.6V
2. The Rest Bin : 3.0V ~ 3.6V
Apr. 24. 2000
Aug. 25. 2000
Final
Final
Rev. 3.3
VIH/VIL Change
Item
VIH
VIL
Previous
Min
Max
2.0
VCC+0.5
-0.5
0.8
Changed
Min
Max
2.0
VCC+0.3
-0.3
0.8
Oct. 2. 2000
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 3.3
October 2000