K6R1008V1C-TI15 Datasheet, PDF (1/9 Pages) Samsung semiconductor – 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).

K6R1008V1C-C/C-L, K6R1008V1C-I/C-P
Document Title
128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
P
CMOS SRAM
Revision History
Rev. No.
History
Rev. 0.0
Initial release with Preliminary.
Rev. 1.0
Relax DC characteristics.
Item
ICC
12ns
15ns
20ns
Previous
70mA
68mA
65mA
Changed
75mA
73mA
70mA
Draft Data
Aug. 5. 1998
Sep. 7. 1998
Remark
Preliminary
Preliminary
Rev. 2.0
Rev. 3.0
Rev. 3.1
Rev. 4.0
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Changed Standby Current.
Item
Previous
Standby Current(Isb1)
0.3mA
2.3. Added Data Retention Characteristics.
Changed
0.5mA
Add 10ns part.
VIH/VIL Change
Item
VIH
VIL
Previous
Min
Max
2.0
VCC+0.5
-0.5
0.8
Changed
Min
Max
2.0
VCC+0.3
-0.3
0.8
Delete 20ns speed bin
Mar. 3. 1999
Final
Apr. 24. 2000
Oct. 2. 2000
Final
Final
Sep. 24. 2001
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 4.0
September 2001