K6R1004V1D Datasheet, PDF (1/9 Pages) Samsung semiconductor – 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

K6R1004V1D
PRELIMINARY
PR_CE_ML_OI_fM_oSrI_SN_ARA_TA&R_MTY
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
History
Rev. 0.0
Rev. 0.1
Rev. 0.2
Initial document.
Speed bin modify
Current modify
Rev. 1.0
1. Final datasheet release
2. Delete 12ns speed bin.
3. Change Icc for Industrial mode.
Item
Previous
ICC(Industrial)
8ns
10ns
100mA
85mA
Current
90mA
75mA
Draft Data
Remark
May. 11. 2001
June. 18. 2001
September. 9. 2001
Preliminary
Preliminary
Preliminary
December. 18. 2001 Final
Rev. 2.0
Rev. 3.0
1. Delete UB,LB releated timing diagram.
1. Add the Lead Free Package type.
June. 19. 2002
July. 26, 2004
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 3.0
July 2004