K6R1004V1C-C Datasheet, PDF (1/9 Pages) Samsung semiconductor – 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).

K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
PRELIMINARY
PRELIMINARY
CMOS SRAM
Document Title
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
Revision History
Rev. No.
History
Rev. 0.0
Initial release with Preliminary.
Rev. 1.0
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Relax DC characteristics.
Item
ICC
12ns
15ns
20ns
Rev. 2.0
Add 10ns & Low Power Ver.
CCPCCCRCPEreLlIiMmIiNnAarRyY
Draft Data
Aug. 5th. 1998
Sep. 7th. 1998
Remark
Preliminary
Final
Previous
65mA
63mA
60mA
Changed
70mA
68mA
65mA
Apr. 24. 2000
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 2.0
April 2000