K6R1004C1A Datasheet, PDF (1/8 Pages) Samsung semiconductor – 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

PRELIMINARY
K6R1004C1A-C
CMOS SRAM
Document Title
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out.
Revision History
Rev. No.
History
Rev. 0.0
Initial release with Preliminary.
Rev. 1.0
Release to final Data Sheet.
1.1. Delete Preliminary
Rev. 2.0
Update D.C parameters.
2.1. Update D.C parameters.
Items
Previous spec.
(12/15/17/20ns part)
Icc
200/190/180/170mA
Isb
30mA
Isb1
10mA
Updated spec.
(12/15/17/20ns part)
150/145/145/140mA
25mA
8mA
Rev. 3.0
Add Industrial Temperature Range parts.
3.1. Add Industrial Temperature Range parts with the same parame-
ters as Commercial Temperature Range parts.
3.1.1. Add K6R1004C1A parts for Industrial Temperature Range.
3.1.2. Add ordering information.
3.1.3. Add the condition for operating at Industrial Temp. Range.
3.2. Add the test condition for VOH1 with VCC=5V±5% at 25°C
3.3. Add timing diagram to define tWP as ″(Timing Wave Form of
Write Cycle(CS=Controlled)″
Rev. 4.0
4.1. Delete Industrial Temperature Range Part
4.2. Delete TSOP2 Package
4.3. Delete 17ns Part
Draft Data
Apr. 22th, 1995
Feb. 29th, 1996
Remark
Preliminary
Final
Jul. 16th, 1996
Final
Jun. 2nd, 1997
Final
Feb. 25th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 4.0
February 1998