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K1S64161CC Datasheet, PDF (1/10 Pages) Samsung semiconductor – 4Mx16 bit Page Mode Uni-Transistor Random Access Memory
K1S64161CC
Document Title
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0
Initial Draft
- Design Target
0.1
Revised
- Filled out ICC2 and ISB1 value
ICC2(max) : 40mA
ISB1(max,< 40°C) : 120µA
ISB1(max,< 85°C) : 180µA
- Changed tOH from min.5ns into min.3ns
- Added tCSHP(CS High Pulse Width) as min.10ns
- Added tWHP(WE High Pulse Width) as min.5ns
1.0
Finalize
- Added Lead Free Product
Draft Date
April 12, 2004
Remark
Advanced
November 3, 2004 Preliminary
April 06, 2005
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 1.0
April 2005