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CL32B475KBUYNNE Datasheet, PDF (1/2 Pages) Samsung semiconductor – SPECIFICATION
SPECIFICATION
• Supplier : Samsung electro-mechanics
• Product : Multi-layer Ceramic Capacitor
A. Samsung Part Number
• Samsung P/N : CL32B475KBUYNNE
• Description : CAP, 4.7㎌, 50V, ±10%, X7R, 1210
CL 32 B 475 K B U Y N N E
① ②③ ④ ⑤⑥⑦⑧⑨⑩⑪
① Series
② Size
③ Dielectric
④ Capacitance
⑤ Capacitance
tolerance
⑥ Rated Voltage
⑦ Thickness
Samsung Multi-layer Ceramic Capacitor
1210 (inch code)
L: 3.2 ± 0.3 mm
W:
⑧ Thickness division
X7R
Inner electrode
4.7 ㎌
Termination
±10 %
Plating
⑨ Product
50 V
⑩ Special
1.8 ± 0.2 mm
⑪ Packaging
2.5 ± 0.2 mm
Low profile
Ni
Cu/Ag-Epoxy
Sn 100% (Pb Free)
Normal
Reserved for future use
Embossed Type, 7" reel
B. Samsung Reliablility Test and Judgement condition
Capacitance
Tan δ (DF)
Insulation
Resistance
Appearance
Withstanding
Voltage
Temperature
Characterisitcs
Adhesive Strength
of Termination
Bending Strength
Solderability
Performance
Test condition
Within specified tolerance
1㎑±10%
1.0±0.2Vrms
0.1 max.
10,000Mohm or 100Mohm⋅㎌
Rated Voltage 60~120 sec.
Whichever is Smaller
No abnormal exterior appearance
Microscope (×10)
No dielectric breakdown or
250% of the rated voltage
mechanical breakdown
X7R
(From -55℃ to 125℃, Capacitance change shoud be within ±15%)
No peeling shall be occur on the
500g⋅F, for 10±1 sec.
terminal electrode
Capacitance change : within ±12.5% Bending to the limit (1mm)
with 1.0mm/sec.
More than 75% of terminal surface
SnAg3.0Cu0.5 solder
is to be soldered newly
245±5℃, 3±0.3sec.
(preheating : 80~120℃ for 10~30sec.)
Resistance to
Soldering heat
Capacitance change : within ±7.5% Solder pot : 270±5℃, 10±1sec.
Tan δ, IR : initial spec.