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CL32B475KBUYNNE Datasheet, PDF (1/2 Pages) Samsung semiconductor – SPECIFICATION | |||
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SPECIFICATION
⢠Supplier : Samsung electro-mechanics
⢠Product : Multi-layer Ceramic Capacitor
A. Samsung Part Number
⢠Samsung P/N : CL32B475KBUYNNE
⢠Description : CAP, 4.7ã, 50V, ±10%, X7R, 1210
CL 32 B 475 K B U Y N N E
â â¡â¢ ⣠â¤â¥â¦â§â¨â©âª
â Series
â¡ Size
⢠Dielectric
⣠Capacitance
⤠Capacitance
tolerance
⥠Rated Voltage
⦠Thickness
Samsung Multi-layer Ceramic Capacitor
1210 (inch code)
L: 3.2 ± 0.3 mm
W:
⧠Thickness division
X7R
Inner electrode
4.7 ã
Termination
±10 %
Plating
⨠Product
50 V
â© Special
1.8 ± 0.2 mm
⪠Packaging
2.5 ± 0.2 mm
Low profile
Ni
Cu/Ag-Epoxy
Sn 100% (Pb Free)
Normal
Reserved for future use
Embossed Type, 7" reel
B. Samsung Reliablility Test and Judgement condition
Capacitance
Tan δ (DF)
Insulation
Resistance
Appearance
Withstanding
Voltage
Temperature
Characterisitcs
Adhesive Strength
of Termination
Bending Strength
Solderability
Performance
Test condition
Within specified tolerance
1ã±10%
1.0±0.2Vrms
0.1 max.
10,000Mohm or 100Mohmâ
ã
Rated Voltage 60~120 sec.
Whichever is Smaller
No abnormal exterior appearance
Microscope (Ã10)
No dielectric breakdown or
250% of the rated voltage
mechanical breakdown
X7R
(From -55â to 125â, Capacitance change shoud be within ±15%)
No peeling shall be occur on the
500gâ
F, for 10±1 sec.
terminal electrode
Capacitance change : within ±12.5% Bending to the limit (1mm)
with 1.0mm/sec.
More than 75% of terminal surface
SnAg3.0Cu0.5 solder
is to be soldered newly
245±5â, 3±0.3sec.
(preheating : 80~120â for 10~30sec.)
Resistance to
Soldering heat
Capacitance change : within ±7.5% Solder pot : 270±5â, 10±1sec.
Tan δ, IR : initial spec.
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