STU310DH Datasheet, PDF (9/11 Pages) SamHop Microelectronics Corp. – Dual E nhancementMode Field E ffect Transistor ( N and P Channel)

S TU310DH
1500
1250
C is s
1000
750
500
C oss
6
250
C rss
0
0 5 10 15 20 25 30
-V DS , Drain-to S ource Voltage (V )
F igure 10. C apacitance
10
VDS =-15V
8
ID=-20A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, T otal G ate C harge (nC )
F igure 11. G ate C harge
500
70
Tr
100
60
10
TD(off)
Tf
TD(on)
50
10ms
10
1s^100ms
V DS =-15V,ID=-1A
1
V G S =-10V
1
6 10
60 100 300 600
R g, G ate R es is tance (Ω)
F igure 12.s witching characteris tics
2
1
D =0 . 5
1 ^{VGS =-10V}
S ingle P ulse
0.03 ^{Tc=25 C}
0.1
1
10 30 60
-V DS , Drain-S ource V oltage (V )
F igure 13. Maximum S afe
O perating Area
0.2
0.1
0.1
0.05
0.02
0.01
S INGLE PULS E
0.01
-5
10
-4
10
-3
10
-2
10
-1
10
S quare Wave P uls e Duration (s ec)
P DM
t1
t2
1. R ▽JA (t)=r (t) * R ▽JA
2. R ▽JA=S ee Datas heet
3. T J M-T A = P DM* R ⒩J A (t)
4. Duty C ycle, D=t1/t2
1
10
F igure 14. Normalized T hermal T rans ient Impedance C urve
9