STM8300 Datasheet, PDF (8/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

STM8300
120
ID=-4.7A
100
80
125 C
60
75 C
40
25 C
20
0
0
2
4
6
8
10
-VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Ver 1.0
20.0
10.0
125 C
75 C
25 C
1.0
0
0.3 0.6 0.9 1.2 1.5
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
900
750
600
Ciss
450
300
Coss
150
Crss
0
0
5
10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
10
8
VDS=-15V
ID=-4.7A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
250
100
60
10
T D(off)
Tr
Tf
T D(on)
V D S = -15V,I D=-1A
1 _{V G S = -10 V}
1
6 10
60 100 300 600
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
70
10
R ^{DS(ON) Limit}
1
100us
1001m0ms1sms
DC
V GS =10V
0.1 ^{S ingle P ulse}
T A=25 C
0.1
1
10 30 50
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jul,31,2008
8
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