STM8358S Datasheet, PDF (7/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field Effect Transistor (N and P Channel)

S TM8358S
P-C hannel
30
V GS =-10V
25
V GS =-4.5V
20
V GS =-4V
15
10
V GS =-3V
5
0
0 0.5 1 1.5 2 2.5 3
-V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
-55 C
16
12
8
T j=125 C
4
25 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
-V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
120
100
80
V GS =-4.5V
60
40
20
0
1
V GS =-10V
5
10
15
20
25
-ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
2.0
1.8
V G S =-10V
ID=-5A
1.6
1.4
1.2
V G S =-4.5V
ID=-4A
1.0
0.0
0
25 50
75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
7