STS8213 Datasheet, PDF (5/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STS8213
Ver 1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
ID = 3.5A
50
40
VGS = 2.5 V
3.1 V
30
3.7 V
4.0 V
20
10
0
-50
0
50
100
150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
4
100
tf
10
tr
td(off)
td(on)
VDD = 16.0 V
VGS = 4V
RG = 6 Ω
1
0.1
1
10
ID - Drain Current - A
3
VDD = 4.0 V
10 V
2
16 V
1
ID = 7 A
0
0
2
4
6
8
10
QG - Gate Charge -nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
Jan,02,2013
5
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