STM8601 Datasheet, PDF (5/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

STM8601
120
ID=4.5A
100
125 C
80
75 C
60
25 C
40
20
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
1000
Cis s
800
600
400
200
C rss
0
0
5
Cos s
10 15
20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20.0
10.0
5
125 C
25 C
Ver 1.0
75 C
1.0
0
0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8 ^VDS=30V
ID=4.5A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
300
100
TD(off )
TD(on)
Tr
10
Tf
VDS=30V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
50
10
R ^{DS(ON) Limit}
1
1ms ^100us
DC
0.1 VGS=10V
Single Pulse
TA=25 C
0.02
0.1
1
10
60
300
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Nov,06,2008
5
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