STM8319 Datasheet, PDF (5/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

STM8319
49
ID=7A
42
35
75 C
28
125 C
21
25 C
14
7
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
900
750
600
Ciss
450
300
Coss
150
Crss
0
0
5
10 15
20
25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20.0
10.0
125 C
75 C
25 C
1.0
0.4
0.6
0.8 1.0 1.2
1.4
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=15V
8
ID=7A
6
4
2
0
01234 5 678
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
250
Tr
100
60
TD(off )
Tf
TD(on)
10
VDS=15V,ID=1A
1
VGS=10V
1
6 10
60 100 300 600
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
100
10
R ^{DS(ON) Limit}
1
100us
1ms
DC100m10sms
V GS =10V
S ingle P ulse
0.1
Tc=25 C
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Oct,29,2007
5
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