STM8309 Datasheet, PDF (5/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

S TM8309
1.3
1.2
V DS =V G S
ID=250uA
1.1
1.0
0.9
0.8
6
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
49
ID=7A
42
35
75 C
28
125 C
21
25 C
14
7
0
2
4
6
8
10
V G S , G ate-S ource Voltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
1.15
1.10
ID=250uA
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
10.0
125 C
75 C
25 C
1.0
0.4 0.6 0.8 1.0 1.2 1.4
V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5