STM6926 Datasheet, PDF (5/7 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

STM6926
2400
2000
1600
C is s
1200
6
800
400
C rss
0
05
C oss
10 15
20 25 30
VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
600
100
60
10
TD(off)
Tr
Tf
TD(on)
10
VDS=15V
8 _ID=10A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
50
10
10ms
100ms
1
1s
DC
V DS =15V ,ID=1A
1
VGS=10V
1
6 10
60 100 300 600
Rg, Gate Resistance (Ω)
Figure 11.switching characteristics
9
0.1 VGS=10V
Single Pulse
0.03 ^{TA=25 C}
0.1
1
10 30 50
VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
Single Pulse
P DM
t1
t2
on
1. RthJA (t)=r (t) * R JAth
2. R tJhA=See Datasheet
3. TJM-TA = PDM* R JA t(ht)
4. Duty Cycle, D=t1/t2
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
1000