STM4435 Datasheet, PDF (5/8 Pages) SamHop Microelectronics Corp. – P-Channel E nhancement Mode Field Effect Transistor

S TM4435
2000
Ciss
1600
10
VDS =-15 V
8 _ID=-8A
1200
6
800
4
Coss
6
400
2
Crss
0
0 5 10 15 20 ²⁵ 30
0
0 ⁴ 8 12 ¹⁶ 20 24 28 32
-V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
600
100 TD(off)
60 _Tf
Tr
T D ^{(o n)}
10
50
10
R ^{DS(ON) Limit}
1
1001m0sms
1s
DC
V D S = -15V,I D=-1A
1
V G S = -10 V
1
6 10
60 100 300 600
R g, G ate R es is tance (W)
F igure 11.s witching characteris tics
0.1 VGS =-10V
S ingle P ulse
T A=25 C
0.03
0.1
1
10 30 50
-V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
5