STA6610 Datasheet, PDF (5/6 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

S TA6610
900
750
Ciss
600
450
300
Coss
150
Crss
6
0
0
5
10 15
20
25 30
VDS, Drain-to Source Voltage (V)
F igure 8. C apacitance
250
100
60
10
T D(off)
Tr
Tf
T D(on)
1
V DS =15V ,ID=7A
V G S =10V
1
6 10
60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
9
10
VDS =15V
8
ID=7A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, T otal G ate C harge (nC )
F igure 9. G ate C harge
40
10
R ^{DS(ON) Limit}
11
0.1
0.03
0.1
VGS =10V
S ingle P ulse
T A=25 C
1
10ms
100ms
1s
DC
10 30 50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10
100
1000
5