STUD45N01 Datasheet, PDF (4/10 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU45N01
STD45N01
90
ID=20A
75
60
125 C
45
30
75 C
15
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
3600
3000
Ciss
2400
1800
Coss
1200
600
Crss
0
0
5
10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20
125 C
10
Ver 1.0
25 C
75 C
1
0 0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS=50V
ID=20A
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
1000
100
TD(off )
Tr
TD(on)
Tf
VDS=50V,ID=1A
VGS=10V
10
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
100
100us
10
1
VGS=10V
Single Pulse
TC=25 C
0.3
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Aug,05,2013
4
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